Direct and subdiffraction-limit laser nanofabrication in silicon

Huang, S. M.; Hong, M. H.; Luk’yanchuk, B. S.; Chong, T. C.
June 2003
Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4809
Academic Journal
We propose a method for nanofabrication at a resolution much below the diffraction limit for projection optical lithography using a backside-irradiation method. Feature sizes below λ/260 have been achieved in silicon. An infrared laser (CO[SUB2] λ = 10.6 mμ) was used to illuminate the backside of a Si substrate with Au particles on its polished surface. The morphologies of created features were characterized by atomic force microscope and field emission scanning electron microscope. The formation mechanisms of these nanofeatures have been discussed and associated with localized optical excitations in Au colloid aggregates with a fractal structure. This backside-irradiation laser-assisted nanofabrication method may also be extended to various metals, particle shapes, particle sizes, substrates, and other lasers. It can be used to investigate optical excitations and near fields in these systems.


Related Articles

  • Fabrication of half-pitch 32 nm resist patterns using near-field lithography with a-Si mask. Ito, Toshiki; Yamada, Tomohiro; Inao, Yasuhisa; Yamaguchi, Takako; Mizutani, Natsuhiko; Kuroda, Ryo // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p033113 

    We evaluated the performances of Cr and amorphous Si (a-Si) films as light absorber materials for photomasks of near-field lithography on the basis of numerical studies using finite-difference time domain method and experimental results of fabrication process. With exposure experiments using...

  • Near-field laser parallel nanofabrication of arbitrary-shaped patterns. Guo, W.; Wang, Z. B.; Li, L.; Whitehead, D. J.; Luk’yanchuk, B. S.; Liu, Z. // Applied Physics Letters;6/11/2007, Vol. 90 Issue 24, p243101 

    The authors present a simple and efficient technique for laser writing of arbitrary nanopatterns across a large surface area without using projection masks. It is based on the unique near-field focusing effect of a self-assembled particle array on the surface interacting with an angular incident...

  • Exploiting design regularity for optical RET lithography. Fritze, Michael; Tyrrell, Brian // Solid State Technology;Aug2004, Vol. 47 Issue 8, p26 

    Examines design regularity for optical resolution-enhancement techniques (RET) lithography. Progress in immersion lithography; Change in design approach; Assessment of design practices.

  • Prospects and challenges of optical RET. Fritze, Michael; Tyrrell, Brian // Solid State Technology;Feb2003, Vol. 46 Issue 2, p61 

    Focuses on advancements in resolution enhancement technology (RET) in optical lithography. Commonly-used RET methods; Challenges of optical RET; Competing approaches to RET. INSET: OVERVIEW.

  • Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy. Williams, C. C.; Slinkman, J.; Hough, W. P.; Wickramasinghe, H. K. // Applied Physics Letters;10/16/1989, Vol. 55 Issue 16, p1662 

    Measurement of dopant density in silicon with lateral resolution on the 200 nm scale has been demonstrated with a near-field capacitance technique. The technique is based upon the measurement of local capacitance between a 100 nm tip and a semiconducting surface. Lateral dopant imaging is...

  • Plasma formation by high-repetition rate pulsed periodic laser irradiation of metals in air at atmospheric and reduced pressures. Chumakov, A.; Avramenko, V.; Bosak, N. // Journal of Applied Spectroscopy;May2012, Vol. 79 Issue 2, p261 

    High-speed spectroscopy with spatial and temporal resolution is used to determine the basic plasma parameters and to examine the shift from an air plasma to an erosion plasma during multipulse laser irradiation of various metals at repetition rates ranging from 5 to 50 kHz with irradiances q >...

  • Optimized illumination settings extend ArF lithography to 65nm. Shu-Hao Hsu; Shu-Ping Fang; Huang, I.H.; Benjamin Szu-Min Lin; Kuei-Chun Hung // Solid State Technology;Aug2004, Vol. 47 Issue 8, p39 

    Focuses on the effects of optimized illumination settings on argon-fluoride lithography (ArF). Extension of 193nm ArF lithography to 65nm processes; Need for resolution-enhancement techniques to apply ArF tools; Effects in the extensions of 193nm lithography; Description of poly-gate patterning.

  • Fabrication-tolerant 1310 nm laterally-coupled distributed feedback lasers with high side mode suppression ratios. Millett, R.; Dridi, K.; Benhsaien, A.; Schriemer, H.; Hinzer, K.; Hall, T. // AIP Conference Proceedings;11/10/2010, Vol. 1288 Issue 1, p88 

    A laterally-coupled distributed feedback (LC-DFB) laser was designed and fabricated using stepper lithography. Such DFB lasers eliminate the need of the commonly required re-growth steps in a conventional DFB laser fabrication process. With LC-DFB lasers, the grating can be lithographically...

  • Optical studies during pulsed CO2 laser irradiation of ion-implanted silicon. James, R. B.; Narayan, J.; Wood, R. F.; Ottesen, D. K.; Siegfriedt, K. F. // Journal of Applied Physics;5/15/1985, Vol. 57 Issue 10, p4727 

    Investigates the time-resolved optical reflectivity of ion-implanted silicon during carbon dioxide laser irradiation. Details on the experiment; Results; Conclusions.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics