Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

Youngmin Lee; Sejoon Lee; Hyunsik Im; Toshiro Hiramoto
February 2015
Journal of Applied Physics;2015, Vol. 117 Issue 6, p064501-1
Academic Journal
We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ~200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multifunctional one-transistor logic gate with AND, OR, NAND, and XOR functions.


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