Magnetic frustration and dielectric relaxation in insulating Nd2NiMnO6 double perovskites

Yadav, Ruchika; Elizabeth, Suja
February 2015
Journal of Applied Physics;2015, Vol. 117 Issue 5, p053902-1
Academic Journal
We have investigated structural, dielectric, and magnetic properties of polycrystalline double perovskite Nd2NiMnO6 compound. The compound crystallizes in monoclinic P21/n symmetry and is partially B-site disordered depending on the synthesis conditions. It undergoes second-order ferromagnetic transition at 192K and shows glassy behaviour at low temperature. The glassy phase is due to anti-site disorder within the homogeneous sample. Temperature and frequency dependent dielectric measurements reveal colossal values of dielectric constant and is best interpreted using Maxwell-Wagner interfacial polarization model. Impedance spectroscopy has been used to analyse the intrinsic dielectric response. This enabled us to differentiate the conduction process at the grain and grain boundaries. Arrhenius behaviour is favoured at the grain boundary, while variable range hopping mechanism is considered most suitable within the grain region. dc conductivity measurements corroborate variable range hopping conduction.


Related Articles

  • Synthesis characterization and dielectric properties of a new cation-deficient perovskite Ba4La2Ti3Nb2O18. Fang, L.; Zhang, H.; Yuan, R. Z.; Dronskowski, R. // Journal of Materials Science;Dec2004, Vol. 39 Issue 23, p7093 

    Focuses on the synthesis, characterization, and dielectric properties of a new A6B5O18 type cation-deficient perovskite. Preparation of the polycrystalline sample of the perovskite using high temperature solid-state reaction techniques; Details of the procedure; Duration of the sintering of the...

  • Non-Ohmic and dielectric properties of a Ca2Cu2Ti4O12 polycrystalline system. Ramírez, M. A.; Bueno, P. R.; Varela, J. A.; Longo, E. // Applied Physics Letters;11/20/2006, Vol. 89 Issue 21, p212102 

    An investigation was made into the non-Ohmic and dielectric properties of a Ca2Cu2Ti4O12 perovskite-type system. Compared to the traditional CaCu3Ti4O12-based composition, the imbalance between the Ca and Cu atoms caused the formation of a polycrystalline system presenting ∼33.3 mol % of...

  • Orientation-dependent phase transition and dielectric properties of BaCaTiZrO thin films. Yang, Shihua; Xu, JinBao; Gao, Bo; Wang, Lei; Chen, Jing; Chen, Xueying // Journal of Materials Science: Materials in Electronics;Feb2013, Vol. 24 Issue 2, p658 

    Polycrystalline BaCaTiZrO (BCZT) thin films with (100) preferential and random orientation are prepared on the LaNiO electrodes coated on Si substrates by chemical solution deposition process. The results show that the two types of films stabilize in the pure perovskite structure. The...

  • Effect of Ba2+ in BNT ceramics on dielectric and conductivity properties. Rao, Konapala Sambasiva; Rajulu, Kuan China Varada; Tilak, Bollepalli; Swathi, Anem // Engineering;Apr2010, Vol. 2 Issue 4, p357 

    The polycrystalline (Na0.5Bi0.5)1-xBaxTiO3 (x = 0.026, 0.055 & 0.065) (BNBT) ceramics have been synthesized by conventional solid state sintering technique. The tolerance (t) factor of the BNBT composition have been estimated and found to be 0.988, 0.990 and 0.991 for x = 0.026, 0.055 and 0.065...

  • Electronic structure of polycrystalline AMoO... (A=Sr or Ba). Mizoguchi, H.; Takeuchi, T. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6502 

    Focuses on a study on electron energy loss spectra of polycrystalline strontium or barium perovskites with metallic conductivities. Experimental procedures; Results.

  • Large low-field magnetoresistance and T[sub C] in polycrystalline (Ba[sub 0.8]Sr[sub 0.2])[sub 2-x]La[sub x]FeMoO[sub 6] double perovskites. Serrate, D.; De Teresa, J. M.; Blasco, J.; Ibarra, M. R.; Morello´n, L.; Ritter, C. // Applied Physics Letters;6/17/2002, Vol. 80 Issue 24, p4573 

    Large low-field magnetoresistance (LFMR) together with high Curie temperatures (T[sub C]) are requirements for some applications in magnetoelectronics. In order to optimize both parameters, we have investigated double perovskites (Ba[sub 0.8]Sr[sub 0.2])[sub 2-x]La[sub x]FeMoO[sub 6] (0...

  • Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications. McDaniel, Martin D.; Chengqing Hu; Lu, Sirong; Ngo, Thong Q.; Posadas, Agham; Aiting Jiang; Smith, David J.; Yu, Edward T.; Demkov, Alexander A.; Ekerdt, John G. // Journal of Applied Physics;2015, Vol. 117 Issue 5, p054101-1 

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at...

  • Elastic behavior of polycrystalline Nb3Sn at low temperatures. Poirier, M.; Laroche, F.; Martin, M.; Bussière, J. F. // Applied Physics Letters;7/15/1985, Vol. 47 Issue 2, p92 

    The elastic constants of polycrystalline Nb[sub 3]Sn were determined as a function of temperature when the samples were submitted to uniaxial tensile stress. The Young's (E) and shear (G) moduli were obtained from an ultrasonic pulse transmission technique in the range 4-300 K. Their behavior...

  • Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si[sub 1-x]Ge[sub x](x=0,0.6)/HfO[sub 2] gate stack. Sung Kwan Kang; Suheun Nam; Byung Gi Min; Seok Woo Nam; Dae-Hong Ko; Mann-Ho Cho // Applied Physics Letters;9/8/2003, Vol. 83 Issue 10, p2004 

    The effect of interfacial reactions on the electrical properties of a polycrystalline (poly) Si[sub 1-x]Ge[sub x]/HfO[sub 2] gate stack were evaluated in terms of annealing conditions and the results were compared with those of a conventional poly-Si/HfO[sub 2] system. In the poly-Si[sub...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics