Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer

Raja, Jayapal; Kyungsoo Jang; Hussain, Shahzada Qamar; Balaji, Nagarajan; Chatterjee, Somenath; Velumani, S.; Junsin Yi
January 2015
Applied Physics Letters;1/19/2015, Vol. 106 Issue 3, p1
Academic Journal
Extensive attention on high-definition flat panel displays is the driving force to fabricate high-performance thin-film transistors (TFTs). A hybrid oxide TFTs fabricated using an interfacial layer of nanocrystalline Zr-doped InSnO (nc-ITO:Zr) and an amorphous InSnZnO films as an active channel is reported here. Due to the presence of nc-ITO:Zr layer, an improvement of the field-effect mobility (86.4 cm²/V·s) and threshold voltage (0.43 V) values for TFTs are observed. Positive gate bias stress study indicates the role of nc-ITO:Zr layer in fabricated TFTs through the suppression of charge trapping capability between the channel and insulating layer.


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