TITLE

High pressure synthesis of Te-doped CoSb with enhanced thermoelectric performance

AUTHOR(S)
Zhang, Qian; Li, Xiaohui; Kang, Yulong; Zhang, Long; Yu, Dongli; He, Julong; Liu, Zhongyuan; Tian, Yongjun; Xu, Bo
PUB. DATE
January 2015
SOURCE
Journal of Materials Science: Materials in Electronics;Jan2015, Vol. 26 Issue 1, p385
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Te-doped CoSb skutterudites were successfully synthesized with high pressure synthesis method followed by spark plasma sintering. The introducing of Te atoms into the lattice sites of CoSb resulted in n-type electrical conductivity, which increased with elevated Te doping level. An enhanced power factor, larger than 4,000 µWmK for temperatures higher than 650 K, was observed for CoSbTe. This is a significant value for skutterudites substituted with a single element. Meanwhile, the thermal conductivity of Te-doped CoSb was greatly suppressed due to stronger electron-phonon scattering. The optimized CoSbTe showed a ZT value of 1.15 at 883 K, which rivals the state-of-the-art single elemental filled skutterudites.
ACCESSION #
100319280

 

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