Ultraviolet AlGaN multiple-quantum-well laser diodes

Kneissl, Michael; Treat, David W.; Teepe, Mark; Miyashita, Naoko; Johnson, Noble M.
June 2003
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4441
Academic Journal
We demonstrate ultraviolet emission from current-injection AlGaN multiple-quantum-well laser diodes grown on sapphire substrates by metalorganic chemical vapor deposition. Lasing was obtained in gain-guided laser diode test structures with uncoated facets and cavity length ranging from 400 to 1500 μm. Under pulsed bias conditions, threshold current densities as low as 23 kA/cm[SUP2] have been achieved for laser diodes with emission wavelengths between 359.7 and 361.6 nm. The maximum output power was 45 mW per facet with differential quantum efficiencies of 1.3%.


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