Nonuniform current distribution in metal/diamond/metal vertical structures

Conte, G.; Rossi, M. C.; Salvatori, S.; Tersigni, F.; Ascarelli, P.; Cappelli, E.
June 2003
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4459
Academic Journal
The role of grain boundaries (GBs) in undoped polycrystalline diamond films has been investigated by dc and ac electrical measurements in a wide temperature range. Hopping transport along GB percolating paths and field-assisted thermal ionization of trapped charges are observed at low and high electric field strength, respectively. The temperature dependence of the ac conductivity, which reduces to a universal curve according to a random free-energy barrier model, suggests that, at low field strengths, current flow is mainly confined into GB domains in a wide temperature range. Only in the high-temperature and high-field ranges, do crystalline diamond grains become involved in current transport.


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