Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy

Waki, Ichitaro; Kumtornkittikul, Chaiyasit; Shimogaki, Yukihiro; Nakano, Yoshiaki
June 2003
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4465
Academic Journal
Two-hundred-period high-quality AlN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy are studied using high-resolution x-ray diffraction, transmission electron microscopy, and optical transmission spectroscopy. Excellent interfaces of the MQWs are confirmed by these measurements. The strong intersubband absorption peak at a wavelength of 1.68 μm is achieved for AlN (1.6 nm)/GaN(1.7 nm) MQW. The full width at half-maximum of the absorption peak is estimated to be 27 meV.


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