TITLE

Interface energy of Au[sub 7]Si grown in the interfacial layer of truncated hexagonal dipyramidal Au nanoislands on polycrystalline-silicon

AUTHOR(S)
Wu, J. S.; Chen, Y. F.; Dhara, S.; Wu, C. T.; Chen, K. H.; Chen, L. C.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4468
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Growth of truncated hexagonal dipyramidal Au nanoislands is reported by annealing Au/ amorphous-Si/crystalline-Si at 1030 °C in oxygen and nitrogen ambient. Metastable gold silicide phase of Au[SUB7]Si is observed to form at the interface of Au and polycrystalline Si, which was transformed from amorphous Si. Oxygen, acting as an impurity, inhibits outdiffusion of Si at the interface and thus controls the growth of Si deficient metastable phase of Au[SUB7]Si in a diffusion-limited growth process. Interface energies of Au[SUB7]Si (0.623-0.672 N/m) and Au-Au[SUB7]Si (1.438-1.471 N/m) are derived from the contact angle measurements of the island structure involving Au and Au[SUB7]Si.
ACCESSION #
10024438

 

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