Early manifestation of localization effects in diluted Ga(AsN)

Masia, F.; Polimeni, A.; Baldassarri Höger von Högersthal, G.; Bissiri, M.; Capizzi, M.; Klar, P. J.; Stolz, W.
June 2003
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4474
Academic Journal
The electron effective mass, m[SUBe], and extent of exciton wave function, r[SUBexc], were derived in GaAs[SUB1-y]N[SUBy] (y = 0.043% - 0.5%) from magnetophotoluminescence measurements. With an increase in nitrogen concentration, we find that m[SUBe] and r[SUBexc] undergo a rapid increase and squeezing, respectively, even for y ≈ 0.1%. This quite early manifestation of nitrogen-induced localization effects imposes important constraints on existing theoretical models.


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