Ballistic electron emission luminescence

Appelbaum, Ian; Russell, K. J.; Narayanamurti, V.; Monsma, D. J.; Marcus, C. M.; Hanson, M. P.; Gossard, A. C.; Temkin, H.; Perry, C. H.
June 2003
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4498
Academic Journal
We describe the design, fabrication, and operation of a GaAs-based heterostructure device which emits band gap luminescence from solid-state tunnel-junction ballistic injection of electrons with sub-bandgap energy. We find that, due to energy conservation requirements, a collector bias exceeding a threshold determined by the Schottky barrier height and sample band gap energy must be applied for luminescence emission. The consequences of these results for a hybrid scanning-probe microscopy and spectroscopy combining both ballistic electron emission microscopy and scanning tunneling luminescence are emphasized.


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