High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

Faure-Vincent, J.; Tiusan, C.; Jouguelet, E.; Canet, F.; Sajieddine, M.; Bellouard, C.; Popova, E.; Hehn, M.; Montaigne, F.; Schuhl, A.
June 2003
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4507
Academic Journal
We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By increasing the thickness of the insulating layer (t[SUBMgO]), we have strongly enhanced the tunnel magnetoresistance. Values up to ∼100% at 80 K (∼ 67% at room temperature) have been observed with t[SUBMgO] = 2.5 nm. This tunnel magnetoresistance ratio, which is much larger than the one predicted by the Jullière's model, can be understood in the framework of ab initio calculations.


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