TITLE

High tunnel magnetoresistance in epitaxial Fe/MgO/Fe tunnel junctions

AUTHOR(S)
Faure-Vincent, J.; Tiusan, C.; Jouguelet, E.; Canet, F.; Sajieddine, M.; Bellouard, C.; Popova, E.; Hehn, M.; Montaigne, F.; Schuhl, A.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4507
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on spin-polarized tunneling in fully epitaxial Fe/MgO/Fe/Co tunnel junctions. By increasing the thickness of the insulating layer (t[SUBMgO]), we have strongly enhanced the tunnel magnetoresistance. Values up to ∼100% at 80 K (∼ 67% at room temperature) have been observed with t[SUBMgO] = 2.5 nm. This tunnel magnetoresistance ratio, which is much larger than the one predicted by the Jullière's model, can be understood in the framework of ab initio calculations.
ACCESSION #
10024425

 

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