Surface pattern evolution during thermal Cl[sub 2] etching of GaAs(001)

Schmid, J. H.; Mar, R.; Tiedje, T.
June 2003
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4549
Academic Journal
The evolution of one-and two-dimensional surface gratings during mask-less thermal Cl[SUB2] etching of GaAs is investigated using atomic force microscopy. It is found that the limiting factor for pattern transfer is the anisotropy of the etch rate with respect to crystal orientation. A simple numerical model based on an interpolation of measured etch rates is presented that can be used to calculate the evolution of surface patterns.


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