Time-delayed indium incorporation in ultrathin (In[sub x]Ga[sub 1-x]N/GaN) multiple quantum wells grown by metalorganic vapor phase epitaxy

Schulze, F.; Bläsing, J.; Dadgar, A.; Krost, A.
June 2003
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4558
Academic Journal
In[SUBx]Ga[SUB1-x]N/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy were investigated by x-ray reflectometry and high-resolution x-ray diffractometry. The combination of both analysis methods allows a very precise determination of the structural parameters of the layer systems. From a systematic variation of the growth temperature from 760 to 840 °C and deposition times from 15 to 200 s, a temperature-dependent time delay of the indium incorporation was observed. Preferentially, at lower growth temperatures, indium seems to be accumulated at the GaN surface before the onset of the InGaN quantum well growth. The growth delay increases with decreasing growth temperature.


Related Articles

  • X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes. Korakakis, D.; Ludwig, K. F.; Moustakas, T. D. // Applied Physics Letters;3/2/1998, Vol. 72 Issue 9, p1004 

    GaN/Al[sub 0.20]Ga[sub 0.80]N (50 Ã…/50 Ã…) multiple quantum wells (MQW) with 15 periods were grown on (0001) sapphire substrates by molecular beam epitaxy and evaluated by x-ray diffraction. To simulate an ultraviolet laser diode structure, the substrate was coated first with n-GaN as the...

  • Shortest intersubband transition wavelength (1.68 μm) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy. Waki, Ichitaro; Kumtornkittikul, Chaiyasit; Shimogaki, Yukihiro; Nakano, Yoshiaki // Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4465 

    Two-hundred-period high-quality AlN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy are studied using high-resolution x-ray diffraction, transmission electron microscopy, and optical transmission spectroscopy. Excellent interfaces of the MQWs are confirmed by these...

  • Structural and optical characterization of InP/GaxIn1-xAsyP1-y quantum wells and interfacial layers. Roth, A. P.; Lévesque, P.; Syme, R. W. G.; Lockwood, D. J.; Aers, G. C.; Rao, T. S.; Lacelle, C. // Journal of Applied Physics;10/1/1996, Vol. 80 Issue 7, p4033 

    Focuses on the structural and optical characterization of quantum wells and interfacial layers. Experimental details; Use of chemical beam epitaxy in the growth of multiquantum wells; Techniques used in the study, such as x-ray diffraction, photoluminescence and Raman scattering.

  • Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions. Lazarenko, A.; Nikitina, E.; Pirogov, E.; Sobolev, M.; Egorov, A. // Semiconductors;Mar2014, Vol. 48 Issue 3, p392 

    Experimental samples of semiconductor heterostructures with GaPN layers and GaPN and GaPNAs quantum wells are synthesized by molecular beam epitaxy on GaP (001) substrates. The structural properties of the samples are investigated by X-ray diffraction and the molar fraction x of nitrogen in the...

  • Structural and optical characterization of nonpolar GaN/AlN quantum wells. Ng, H. M.; Bell, A.; Ponce, F. A.; Chu, S. N. G. // Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p653 

    We have grown nonpolar GaN/AlN multiple quantum wells by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction and selected-area diffraction data show that the III-nitride epilayers are oriented in the [11 2 ‾0] direction with the [0001] axis lying in the...

  • Depth-resolving structural analysis of GaN layers by skew angle x-ray diffraction. Reiher, A.; Bläsing, J.; Dadgar, A.; Krost, A. // Applied Physics Letters;5/3/2004, Vol. 84 Issue 18, p3537 

    The method of skew angle x-ray diffraction is presented as the example of GaN-based light emitting diodes (LED) grown by metalorganic vapor phase epitaxy on silicon substrates. This technique in conjunction with a newly developed calculation algorithm allows the depth-resolving structural...

  • Effects of growth temperature on the structural and optical properties of 1.55 μm GaInNAsSb quantum wells grown on GaAs. Bank, Seth R.; Yuen, Homan B.; Wistey, Mark A.; Lordi, Vincenzo; Bae, Hopil P.; Harris Jr., James S. // Applied Physics Letters;7/11/2005, Vol. 87 Issue 2, p021908 

    We investigate the effects of growth temperature on the structural and optical properties of GaInNAsSb single quantum wells grown by molecular beam epitaxy. Peak room-temperature photoluminescence occurred at 1.65 μm as-grown and at 1.55 μm under optimal annealing conditions. Excellent...

  • A study of n +-6 H/ n-3 C/ p +-6 H-SiC heterostructures grown by sublimation epitaxy. Lebedev, A. A.; Strel’chuk, A. M.; Davydov, S. Yu.; Cherenkov, A. E.; Kuznetsov, A. N.; Tregubova, A. S.; Sorokin, L. M.; Shcheglov, M. P.; Sadokhin, A. V.; Yoneda, S.; Nishino, S. // Semiconductors;Dec2006, Vol. 40 Issue 12, p1398 

    The n +-6 H/ n-3 C/ p +-6 H-SiC structure was fabricated for the first time by sublimation epitaxy, with mesa diodes formed on its base and their electrical characteristics were studied. It was found that a green band dominates in the spectrum of injection electroluminescence (EL) of these...

  • High-resolution X-ray Microdiffraction System for Characterization of Selectively Grown Layers using a Zone Plate Combined with a Narrow Slit. Kimura, Shigeru; Kagoshima, Yasushi; Koyama, Takahisa; Wada, Izumi; Niimi, Toshihiro; Tsusaka, Yoshiyuki; Matsui, Junji; Izumi, Koich; Warwick, T. // AIP Conference Proceedings;2004, Vol. 705 Issue 1, p1275 

    We have developed a high-resolution x-ray microdiffraction system at the BL24XU of the SPring-8. This system uses a focused beam produced by using a zone plate combined with a narrow slit. The size of the focused beam is 0.32 μm vertically and 1.3 μm horizontally and the angular divergence...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics