TITLE

Scaling behavior and parasitic series resistance in disordered organic field-effect transistors

AUTHOR(S)
Meijer, E. J.; Gelinck, G. H.; van Veenendaal, E.; Huisman, B.-H.; de Leeuw, D. M.; Klapwijk, T. M.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4576
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The scaling behavior of the transfer characteristics of solution-processed disordered organic thin-film transistors with channel length is investigated. This is done for a variety of organic semiconductors in combination with gold injecting electrodes. From the channel-length dependence of the transistor resistance in the conducting ON-state, we determine the field-effect mobility and the parasitic series resistance. The extracted parasitic resistance, typically in the MΩ range, depends on the applied gate voltage, and we find experimentally that the parasitic resistance decreases with increasing field-effect mobility.
ACCESSION #
10024402

 

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