TITLE

AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors

AUTHOR(S)
Chen, C. Q.; Zhang, J. P.; Adivarahan, V.; Koudymov, A.; Fatima, H.; Simin, G.; Yang, J.; Asif Khan, M.
PUB. DATE
June 2003
SOURCE
Applied Physics Letters;6/23/2003, Vol. 82 Issue 25, p4593
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We propose and demonstrate an AlGaN/GaN/AlGaN double heterostructure (DH) with significantly improved two-dimensional (2D) confinement for high-power III-N heterostructure field-effect transistors (HFETs). The DH was grown directly on an AlN buffer over i-SiC substrate. It enables an excellent confinement of the 2D gas and also does not suffer from the parasitic channel formation as experienced in past designs grown over GaN buffer layers. Elimination of the GaN buffer modifies the strain distribution in the DH, enabling Al contents in the barrier region well over 30%. For the AlGaN/GaN/AlGaN DH design, the 2D electron gas mobility achieved was 1150 cm[SUP2]/V s at room temperature and 3400 cm[SUP2]/V s at 77 K, whereas the temperature independent sheet carrier density was N[SUBS] ≈ 1.1 × 10[SUP13]cm[SUP-2]. Compared to a regular AlGaN/GaN structure, the channel mobility-concentration profiling shows significant improvement in the carrier confinement. Sample DHFETs with 1-μm long gates demonstrate the threshold voltage of 3.5 V, with a peak saturation current of 0.6-0.8 A/mm.
ACCESSION #
10024396

 

Related Articles

  • Maximum current in nitride-based heterostructure field-effect transistors. Koudymov, A.; Fatima, H.; Simin, G.; Yang, J.; Khan, M. Asif; Tarakji, A.; Hu, X.; Shur, M. S.; Gaska, R. // Applied Physics Letters;4/29/2002, Vol. 80 Issue 17, p3216 

    We present experimental and modeling results on the gate-length dependence of the maximum current that can be achieved in GaN-based heterostructure field-effect transistors (HFETs) and metal–oxide–semiconductor HFETs (MOSHFETs). Our results show that the factor limiting the maximum...

  • NEGATIVE DIFFERENTIAL RESISTANCE BEHAVIOR IN DELTA-DOPED AlInP STRUCTURE GROWN BY MOCVD. Yarn, K.F. // Active & Passive Electronic Components;Sep2002, Vol. 25 Issue 3, p245 

    An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of l?kA/cm 2 were achieved at room temperature. In addition, the maximum...

  • A new analytical model for heterostructure field-effect transistors. Grinberg, A. A.; Shur, M. // Journal of Applied Physics;3/1/1989, Vol. 65 Issue 5, p2116 

    Describes an analytical model for heterostructure field-effect transistors. Role of analytical models in the development and design of semiconductor devices; Importance of the effects related to diffusion in determining carrier-concentration profiles; Current-voltage characteristics for the...

  • Response to “Comment on ‘Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors’ ” [Appl. Phys. Lett. 86, 016101 (2005)]. Anwar, A. F. M.; Islam, Syed S.; Webster, Richard T. // Applied Physics Letters;1/3/2005, Vol. 86 Issue 1, p016102 

    This article presents information on metal-semiconductor field effect transistors. The current collapse mechanisms in AlGaN heterostructure field-effect transistors (HFETs) must not be confused with the mechanisms in GaN metal semiconductor field-effect transistors (MESFETs). The MESFET...

  • Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures. Kocan, M.; Umana-Membreno, G. A.; Kilburn, M. R.; Fletcher, I. R.; Recht, F.; McCarthy, L.; Mishra, U. K.; Nener, B. D.; Parish, G. // Journal of Electronic Materials;May2008, Vol. 37 Issue 5, p554 

    This paper reports results of scanning ion probe studies of silicon implantation profiles in source and drain regions of AlGaN/GaN high-electron-mobility transistor (HEMT) heterostructures. It is shown that both the undoped channel length and the transition region between implanted and...

  • Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor. Woodward, T. K.; McGill, T. C.; Chung, H. F.; Burnham, R. D. // Applied Physics Letters;11/9/1987, Vol. 51 Issue 19, p1542 

    We report experimental realization of a three-terminal negative differential resistance (NDR) device. The device consists of a GaAs-AlxGa1-xAs double-barrier tunneling heterostructure in series with a recessed-gate metal-semiconductor field-effect transistor on a semi-insulating substrate. Basic...

  • Highly doped thin-channel GaN-metal-semiconductor field-effect transistors. Gaska, R.; Shur, M. S.; Hu, X.; Yang, J. W.; Tarakji, A.; Simin, G.; Khan, A.; Deng, J.; Werner, T.; Rumyantsev, S.; Pala, N. // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p769 

    We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal-semiconductor field-effect transistors (MESFETs) grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5x10[sup 18] cm[sup -3]...

  • Study of Hall and effective mobilities in pseudomorphic Si1-xGex p-channel metal-oxide... Lander, R.J.P.; Emeleus, C.J.; McGregor, B. M.; Parker, E. H. C.; Whall, T. E.; Evans, A. G. R.; Kennedy, G. P. // Journal of Applied Physics;11/15/1997, Vol. 82 Issue 10, p5210 

    Studies several Si0.8 Ge0.2 p-channel heterostructures with self-aligned ply-Si metal-oxide-semiconductor gates. Complementary-MOS performance by the low p0MOS field-effect-transistor hole mobility; Development of a fabrication process which has allowed the characterization of a fully...

  • High-sheet-charge–carrier-density AlInN/GaN field-effect transistors on Si(111). Dadgar, A.; Schulze, F.; Bläsing, J.; Diez, A.; Krost, A.; Neuburger, M.; Kohn, E.; Daumiller, I.; Kunze, M. // Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5400 

    AlInN/GaN heterostructures have been proposed to possess advantageous properties for field-effect transistors (FETs) over AlGaN/GaN [Kuzmík, IEEE Electron Device Lett. 22, 501 (2001); Yamaguchi et al., Phys. Status Solidi A 188, 895 (2001)]. A major advantage of such structures is that AlInN...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics