Writing nanotriboelectric charge bits on insulator surface

Son, J. Y.; Lee, Geunhee
October 2008
Applied Physics Letters;10/27/2008, Vol. 93 Issue 17, p173105
Academic Journal
We demonstrated nanotriboelectric charge bits on the surface of insulating SiO2 thin film, prepared by thermo-oxidation of Si substrate with about 100 nm in thickness, by Kelvin probe force microscope. We wrote and read nanotriboelectric charge bits with the various experimental parameters such as contact force, rubbing speed, and repeat number. We could write the nanotriboelectric charge bits with the minimum line width of about 17 nm.


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