Negative-ion implantation into thin SiO2 layer for defined nanoparticle formation

Tsuji, Hiroshi; Arai, Nobutoshi; Gotoh, Naoyuki; Minotani, Takashi; Ishibashi, Toyoji; Okumine, Tetsuya; Adachi, Kouichiro; Kotaki, Hiroshi; Gotoh, Yasuhito; Ishikawa, Junzo
March 2006
Review of Scientific Instruments;Mar2006, Vol. 77 Issue 3, p03A510
Academic Journal
Two methods to form nanoparticles at a certain depth in a thin oxide layer by negative-ion implantation into the oxide layer of silicon substrate have been investigated. One method is by implantation at a low energy and the other is by a thermal diffusion after implantation. Regarding the low-energy implantation, about 1 keV of ion energy is required. In general, a surface charge-up of the oxide layer arises from a positive-ion implantation to affect ion penetration depth. In this research, we used negative ion implantation because of its advantage of almost “charge-up-free” feature, even for insulating materials. We obtained delta-layered gold nanoparticles (Au NPs) in a 25 nm thick SiO2 layer on Si by the low-energy implantation method of gold negative ions at 1 keV. The center depth and an average diameter of the delta-layered Au NPs were 5 nm and 7 nm, respectively. As by the thermal diffusion after implantation, silver negative ions were implanted into 25 nm thick SiO2/Si at 10 keV with 5×1015 ions/cm2 at room temperature. Implanted atoms diffused from the implanted site, depending on annealing temperature. Only after annealing at 700 °C, delta-layered silver nanoparticles (Ag NPs) were obtained near the interface of SiO2/Si.


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